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aft18h356--24sr6 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 63 w asymmetrical doherty rf power ldmos transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 mhz. 1800 mhz ? typical doherty single--carrier w--cdma characterization performance: v dd =28vdc,i dqa = 1100 ma, v gsb =1.45vdc,p out =63wavg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 1805 mhz 15.1 47.3 7.6 ?33.2 ?13 1840 mhz 15.5 47.4 7.5 ?35.5 ?13 1880 mhz 15.0 46.7 7.3 ?38.5 ?12 1900 mhz ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 950 ma, v gsb =1.3vdc,p out = 63 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 1930 mhz 15.3 48.4 7.6 ?30.3 ?18 1960 mhz 15.5 48.1 7.5 ?30.6 ?16 1995 mhz 15.4 47.8 7.4 ?31.2 ?12 features ? advanced high performance in--package doherty ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? in tape and reel. r6 suffix = 150 units, 56 mm tape width, 13--inch reel. document number: aft18h356--24s rev. 1, 3/2015 freescale semiconductor technical data ni--1230s--4l2l (top view) rf outa /v dsa rf outb /v dsb rf ina /v gsa rf inb /v gsb vbw a (1) 6 3 15 24 carrier peaking figure 1. pin connections 1805?1995 mhz, 63 w avg., 28 v airfast rf power ldmos transistor aft18h356--24sr6 vbw b (1) 1. device cannot operate with the v dd current supplied through pin 3 and pin 6. ? freescale semiconductor, inc., 2013, 2015. a ll rights reserved.
2 rf device data freescale semiconductor, inc. aft18h356--24sr6 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +65 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c cw operation @ t c =25 ? c derate above 25 ? c cw 289 1.9 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 77 ? c, 63 w cw, 28 vdc, i dqa = 1100 ma, v gsb = 1.45 vdc, 1880 mhz r ? jc 0.47 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics -- side a (4) gate threshold voltage (v ds =10vdc,i d = 146 ? adc) v gs(th) 1.6 2.1 2.6 vdc gate quiescent voltage (v dd =28vdc,i da = 1100 madc, measured in functional test) v gsa(q) 2.4 2.9 3.4 vdc drain--source on--voltage (v gs =10vdc,i d =1.5adc) v ds(on) 0.1 0.2 0.3 vdc on characteristics -- side b (4) gate threshold voltage (v ds =10vdc,i d = 291 ? adc) v gs(th) 1.6 2.1 2.6 vdc drain--source on--voltage (v gs =10vdc,i d =2.9adc) v ds(on) 0.1 0.2 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. each side of device measured separately. (continued)
aft18h356--24sr6 3 rf device data freescale semiconductor, inc. table 4 . electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2) (in freescale doherty production test fixture, 50 ohm system) v dd =28vdc,i dqa = 1100 ma, v gsb =1.45v, p out = 63 w avg., f = 1880 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 14.5 15.0 17.0 db drain efficiency ? d 45.0 46.7 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.8 7.3 ? db adjacent channel power ratio acpr ? ?38.5 ?26.0 dbc input return loss irl ? ?12 ?8 db load mismatch (2) (in freescale doherty test fixture, 50 ohm system) i dqa = 1100 ma, v gsb = 1.45 vdc, f = 1840 mhz, 1--carrier w--cdma, 3.84 mhz channel bandwidth carriers. par = 9.9 db @ 0.01% probability on ccdf. vswr 10:1 at 31 vdc, 148 w w--cdma output power (3 db input overdrive from p1db with w--cdma test signal) no device degradation typical performance (2) (in freescale doherty characterization test fixture, 50 ohm system) v dd =28vdc,i dqa = 1100 ma, v gsb = 1.45 vdc, 1805?1880 mhz bandwidth p out @ 1 db compression point, cw p1db ? 400 (3,4) ? w p out @ 3 db compression point (5) p3db ? 480 ? w am/pm (maximum value measured at the p3db compression point across the 1805?1880 mhz bandwidth) ? ? ?24 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 80 ? mhz gain flatness in 75 mhz bandwidth @ p out =63wavg. g f ? 0.48 ? db gain variation over temperature (?30 ? cto+85 ? c) ? g ? 0.02 ? db/ ? c output power variation over temperature (?30 ? cto+85 ? c) (4) ? p1db ? 0.026 ? db/ ? c 1. part internally matched both on input and output. 2. measurements made with device in an a symmetrical doherty configuration. 3. calculated from load pull p3db measurements. 4. exceeds recommended operating conditions. see cw operation data in maximum ratings table. 5. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data freescale semiconductor, inc. aft18h356--24sr6 figure 2. aft18h356--24sr6 production t est circuit component layout ? 1805?1880 mhz aft18h356--24s rev. 0 d50288 c17 v gga c4 r1 c6 c2 c19 c20 c7 c3 r2 c1 r3 v ggb c18 c5 c12 v ddb c16 c14 c9 c27 c24 c26 c25 c23 c22 c21 c10 c13 v dda c15 c11 c8 cut out area c p z1 table 5. aft18h356--24sr6 production test circ uit component designati ons and values ? 1805?1880 mhz part description part number manufacturer c1, c2, c3, c4, c5, c8, c9, c10, c23, c24 18 ? f chip capacitors gqm2195c2e180fb12d murata c6, c19, c22, c25 1.2 ? f chip capacitors gqm2195c2e1r2bb12d murata c7, c20 1.5 pf chip capacitors gqm2195c2e1r5bb12d murata c11, c12 4.7 ? f chip capacitors grm32er71h475ka88b murata c13, c14, c17, c18 22 ? f chip capacitors c5750y5v1h226zt tdk c15, c16 470 ? f, 63 v electrolytic capacitors mcgpr63v477m13x26-rh multicomp c21 0.6 pf chip capacitor atc600f0r6bt250xt atc c26, c27 2.4 pf chip capacitors gqm2195c2e2r4bb12d murata r1, r2 2.2 ? , 1/4 w chip resistors crcw12062r20jnea vishay r3 50 ? , 10 w terminator resistor 81a7031-50-5f florida labs z1 1900 mhz band, 5 db directional coupler xc1900a--05s anaren pcb rogers ro4350b, 0.020 ? , ? r =3.66 d50288 mtl
aft18h356--24sr6 5 rf device data freescale semiconductor, inc. figure 3. aft18h356--24sr6 characterizatio n test circuit compone nt layout ? 1805?1880 mhz aft18h356--24s rev. 1 d50791 v gga c3 v ggb v ddb v dda c17 cut out area r1 c5 c1 r3 c19 c2 c4 r2 c6 c18 c14 c12 c16 c10 c8 c7 c15 c13 c11 c9 c p table 6. aft18h356--24sr6 characterization test ci rcuit component designati ons and values ? 1805?1880 mhz part description part number manufacturer c1, c2, c3, c4, c9, c10 18 pf chip capacitors gqm2195c2e180fb12d murata c5, c6 2.2 ? f chip capacitors c1206c225k4rac kemet c7 24 pf chip capacitor atc100b240jt500xt atc c8 10 pf chip capacitor atc100b100jt500xt atc c11, c12 2.2 ? f chip capacitors c1825c225j5rac kemet c13, c14 22 ? f chip capacitors c5750y5v1h226zt tdk c15, c16 470 ? f, 63 v electrolytic capacitors mcgpr63v477m13x26--rh multicomp c17, c18 10 ? f chip capacitors c5750x7s2a106m230kb tdk c19 0.4 pf chip capacitor atc600f0r4bt250xt atc r1, r2 2.2 ? , 1/4 w chip resistors crcw12062r20jnea vishay r3 50 ? , 10 w terminator resistor 81a7031--50--5f florida labs pcb rogers ro4350b, 0.020 ? , ? r =3.66 d50791 mtl
6 rf device data freescale semiconductor, inc. aft18h356--24sr6 typical characteris tics ? 1805?1880 mhz irl, input return loss (db) 1760 acpr f, frequency (mhz) figure 4. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 63 watts avg. -- 1 3 -- 9 -- 1 0 -- 11 -- 1 2 9 19 18 17 -- 4 0 52 50 48 46 -- 3 0 -- 3 2 -- 3 4 -- 3 6 ? d , drain efficiency (%) ? d g ps , power gain (db) 16 15 14 13 12 11 10 1780 1800 1820 1840 1860 1880 1900 1920 44 -- 3 8 -- 1 4 acpr (dbc) parc figure 5. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) im3--u im5--u im5--l im7--l im7--u v dd =28vdc,p out = 70 w (pep), i dqa = 1100 ma v gsb = 1.45 vdc, two--tone measurements, (f1 + f2)/2 = center frequency of 1840 mhz figure 6. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) -- 1 -- 3 30 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 10 50 70 110 0 60 50 40 30 20 10 ? d ? drain efficiency (%) -- 3 d b = 7 9 w 90 ? d parc acpr (dbc) -- 5 0 -- 2 0 -- 2 5 -- 3 0 -- 4 0 -- 3 5 -- 4 5 18 g ps , power gain (db) 17 16 15 14 13 12 -- 1 d b = 3 0 w -- 2 d b = 5 8 w irl parc (db) -- 2 . 8 -- 2 -- 2 . 2 -- 2 . 4 -- 2 . 6 -- 3 -- 5 g ps 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf im3--l 1 v dd =28vdc,i dqa = 1100 ma, v gsb =1.45vdc f = 1840 mhz, single--carrier w--cdma 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0. 01% probab ility on ccdf v dd =28vdc,p out =63w(avg.),i dqa = 1100 ma v gsb = 1.45 vdc, single--carrier w--cdma -- 4 0 g ps acpr
aft18h356--24sr6 7 rf device data freescale semiconductor, inc. typical characteris tics ? 1805?1880 mhz 1 g ps acpr p out , output power (watts) avg. figure 7. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 12 18 0 60 50 40 30 20 ? d , drain efficiency (%) ? d g ps , power gain (db) 17 16 10 100 300 10 -- 6 0 acpr (dbc) 15 14 13 0 -- 3 0 -- 4 0 -- 5 0 figure 8. broadband frequency response 11 17 f, frequency (mhz) v dd =28vdc p in =0dbm i dqa = 1100 ma v gsb =1.45vdc 15 14 13 gain (db) 16 12 1600 1650 1700 1750 1800 1850 1900 1950 2000 -- 2 0 10 5 0 -- 5 -- 1 0 irl (db) -- 1 5 gain irl v dd =28vdc,i dqa = 1100 ma, v gsb =1.45vdc single--carrier w--cdma, 3.84 mhz channel bandwidth 1840 mhz 1805 mhz 1880 mhz 1840 mhz 1805 mhz 1880 mhz 1880 mhz 1840 mhz 1805 mhz input signal par = 9.9 db @ 0.01% probabilit y on ccdf
8 rf device data freescale semiconductor, inc. aft18h356--24sr6 table 7. carrier side load pull performance ? maximum power tuning v dd =28vdc,i dqa = 777 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.20 -- j4.69 1.31 + j4.72 1.12 -- j4.80 16.2 51.5 142 56.2 -- 1 0 1840 1.35 -- j4.79 1.46 + j4.96 1.10 -- j4.89 16.1 51.5 140 55.5 -- 9 1880 1.61 -- j4.95 1.77 + j5.18 1.10 -- j4.93 16.4 51.4 139 55.4 -- 9 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.20 -- j4.69 1.20 + j4.92 1.07 -- j4.99 13.9 52.3 169 57.2 -- 1 5 1840 1.35 -- j4.79 1.36 + j5.19 1.08 -- j5.07 13.9 52.2 166 56.6 -- 1 5 1880 1.61 -- j4.95 1.69 + j5.47 1.10 -- j5.15 14.1 52.1 163 55.9 -- 1 5 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 8. carrier side load pull performance ? maximum drain efficiency tuning v dd =28vdc,i dqa = 777 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.20 -- j4.69 1.25 + j4.80 2.59 -- 3.98 19.1 49.6 90 68.3 -- 1 6 1840 1.35 -- j4.79 1.41 + j5.01 2.49 -- j4.11 19.0 49.5 90 66.8 -- 1 4 1880 1.61 -- j4.95 1.69 + j5.21 2.30 -- j4.09 19.1 49.5 89 65.1 -- 1 4 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.20 -- j4.69 1.15 + j4.94 2.51 -- j4.15 17.0 50.3 108 68.2 -- 2 3 1840 1.35 -- j4.79 1.33 + j5.19 2.45 -- j4.29 16.8 50.3 107 66.1 -- 2 1 1880 1.61 -- j4.95 1.63 + j5.45 2.22 -- j4.17 17.0 50.2 104 64.0 -- 2 1 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
aft18h356--24sr6 9 rf device data freescale semiconductor, inc. table 9. peaking side load pull performance ? maximum power tuning v dd =28vdc,v gsb =1.4vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.07 -- j4.05 0.98 + j4.30 1.38 -- j4.37 14.0 54.6 291 58.2 -- 2 7 1840 1.23 -- j4.30 1.24 + j4.67 1.40 -- j4.58 13.8 54.7 293 57.4 -- 2 6 1880 1.45 -- j4.70 1.76 + j5.14 1.44 -- j4.72 13.8 54.6 288 56.5 -- 2 8 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.07 -- j4.05 0.951 + j4.39 1.98 -- j3.71 13.2 54.4 277 68.0 -- 3 7 1840 1.23 -- j4.30 1.25 + j4.81 1.83 -- j4.08 12.7 54.9 307 65.6 -- 3 7 1880 1.45 -- j4.70 1.88 + j5.34 2.11 -- j4.65 12.1 55.0 316 59.5 -- 2 8 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 10. peaking side load pull performance ? maximum drain efficiency tuning v dd =28vdc,v gsb =1.4vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.07 -- j4.05 0.853 + j4.24 2.37 -- j1.94 15.4 51.6 145 73.1 -- 3 6 1840 1.23 -- j4.30 1.08 + j4.59 2.18 -- j2.05 15.4 51.6 144 73.1 -- 3 6 1880 1.45 -- j4.70 1.55 + j5.03 2.14 -- j2.33 15.3 51.8 150 72.0 -- 3 6 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1805 1.07 -- j4.05 0.92 + j4.37 2.53 -- j2.47 13.4 52.9 193 73.1 -- 4 3 1840 1.23 -- j4.30 1.19 + j4.76 2.34 -- j2.65 13.4 53.0 200 73.2 -- 4 3 1880 1.45 -- j4.70 1.81 + j5.26 2.89 -- j3.68 12.9 54.0 249 74.2 -- 3 7 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
10 rf device data freescale semiconductor, inc. aft18h356--24sr6 p1db -- typical carrier side load pull contours ? 1840 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 9. p1db load pull output power contours (dbm) real ( ? ) imaginary ( ? ) 1.5 14 2.5 2 33.5 -- 6 -- 3 . 5 -- 4 -- 4 . 5 -- 5 -- 5 . 5 -- 3 figure 10. p1db load pull efficiency contours (%) real ( ? ) imaginary ( ? ) 1.5 14 2.5 2 33.5 -- 6 -- 3 . 5 -- 4 -- 4 . 5 -- 5 -- 5 . 5 -- 3 imaginary ( ? ) 1.5 14 2.5 2 33.5 -- 6 -- 3 . 5 -- 4 -- 4 . 5 -- 5 -- 5 . 5 -- 3 figure 11. p1db load pull gain contours (db) real ( ? ) figure 12. p1db load pull am/pm contours ( ? ) real ( ? ) e p 49 48.5 48 48.5 49.5 50 50.5 51 47.5 50 58 52 54 60 56 62 64 66 e p p e 16 16.5 17 17.5 18 18.5 19 19.5 20 1 0.5 3 1.5 2 2.5 -- 5 . 5 -- 3 -- 3 . 5 -- 4 -- 4 . 5 -- 5 -- 6 imaginary ( ? ) p e -- 8 -- 1 0 -- 1 2 -- 1 4 -- 1 6 -- 1 8 -- 2 0 -- 2 2
aft18h356--24sr6 11 rf device data freescale semiconductor, inc. p3db -- typical carrier side load pull contours ? 1840 mhz imaginary ( ? ) 1.5 14 2.5 2 33.5 -- 6 -- 3 . 5 -- 4 -- 4 . 5 -- 5 -- 5 . 5 -- 3 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 13. p3db load pull output power contours (dbm) real ( ? ) imaginary ( ? ) 1.5 14 2.5 2 33.5 -- 6 -- 3 . 5 -- 4 -- 4 . 5 -- 5 -- 5 . 5 -- 3 figure 14. p3db load pull efficiency contours (%) real ( ? ) imaginary ( ? ) 1.5 14 2.5 2 33.5 -- 6 -- 3 . 5 -- 4 -- 4 . 5 -- 5 -- 5 . 5 -- 3 imaginary ( ? ) 1.5 14 2.5 2 33.5 -- 6 -- 3 . 5 -- 4 -- 4 . 5 -- 5 -- 5 . 5 -- 3 figure 15. p3db load pull gain contours (db) real ( ? ) figure 16. p3db load pull am/pm contours ( ? ) real ( ? ) e p 49 49.5 51 48.5 50 50.5 e p 51.5 52 60 58 56 62 64 66 e p 56 50 52 54 14.5 14 15 15.5 16 16.5 17 17.5 18 -- 1 6 -- 2 4 -- 2 6 -- 2 2 -- 1 2 -- 1 8 -- 2 0 -- 1 4 e p
12 rf device data freescale semiconductor, inc. aft18h356--24sr6 p1db -- typical peaking side load pull contours ? 1840 mhz imaginary ( ? ) 1.5 15 2.5 2 33.5 -- 6 -- 1 -- 2 -- 3 -- 4 -- 5 0 44.5 imaginary ( ? ) 1.5 15 2.5 2 33.5 -- 6 -- 1 -- 2 -- 3 -- 4 -- 5 0 44.5 imaginary ( ? ) 1.5 15 2.5 2 33.5 -- 6 -- 1 -- 2 -- 3 -- 4 -- 5 0 44.5 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 17. p1db load pull output power contours (dbm) real ( ? ) imaginary ( ? ) 1.5 15 2.5 2 33.5 -- 6 -- 1 -- 2 -- 3 -- 4 -- 5 0 figure 18. p1db load pull efficiency contours (%) real ( ? ) figure 19. p1db load pull gain contours (db) real ( ? ) figure 20. p1db load pull am/pm contours ( ? ) real ( ? ) 44.5 e p 50.5 51 51.5 52 52.5 53 53.5 54 54.5 58 60 62 64 66 e p 68 70 72 62 60 64 p e 12 13.5 13 14 14.5 12.5 15 15.5 14 e p -- 2 4 -- 2 6 -- 2 8 -- 3 0 -- 3 2 -- 3 4 -- 3 6 -- 3 8 -- 4 0
aft18h356--24sr6 13 rf device data freescale semiconductor, inc. p3db -- typical peaking side load pull contours ? 1840 mhz imaginary ( ? ) 1.5 15 2.5 2 33.5 -- 5 -- 1 . 5 -- 2 -- 2 . 5 -- 3 -- 3 . 5 -- 1 -- 4 -- 4 . 5 44.5 imaginary ( ? ) 1.5 15 2.5 2 33.5 -- 5 -- 1 . 5 -- 2 -- 2 . 5 -- 3 -- 3 . 5 -- 1 -- 4 -- 4 . 5 44.5 imaginary ( ? ) 1.5 15 2.5 2 33.5 -- 5 -- 1 . 5 -- 2 -- 2 . 5 -- 3 -- 3 . 5 -- 1 -- 4 -- 4 . 5 44.5 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 21. p3db load pull output power contours (dbm) real ( ? ) imaginary ( ? ) 1.5 15 2.5 2 33.5 -- 5 -- 1 . 5 -- 2 -- 2 . 5 -- 3 -- 3 . 5 -- 1 figure 22. p3db load pull efficiency contours (%) real ( ? ) figure 23. p3db load pull gain contours (db) real ( ? ) figure 24. p3db load pull am/pm contours ( ? ) real ( ? ) -- 4 -- 4 . 5 44.5 e p 51.5 52 52.5 53 53.5 54 54.5 55 60 68 70 e p 62 64 66 72 e p e p 12.5 12 12 12 13 13.5 12 11.5 -- 3 2 -- 3 6 -- 3 8 -- 4 2 -- 3 4 -- 4 0 -- 4 4 -- 4 6 -- 4 8
14 rf device data freescale semiconductor, inc. aft18h356--24sr6 alternate characteriz ation ? 1930?1995 mhz figure 25. aft18h356--24sr6 test ci rcuit component l ayout ? 1930?1995 mhz cut out area aft18h356--24s rev. 2 d53347 v gga c5 c p v ggb v dda v ddb c3 r1 c1 c2 c4 r2 c6 r3 c17 c14 c16 c10 c12 c8 c11 c7 c9 c18 c13 c15 table 11. aft18h356--24sr6 test circuit c omponent designations and values ? 1930?1995 mhz part description part number manufacturer c1, c2, c3, c4, c7, c9, c10 18 pf chip capacitors gqm2195c2e180fb12d murata c5, c6 2.2 ? f chip capacitors c1206c225k4rac kemet c8 12 pf chip capacitor atc100b120jt500xt atc c11, c12 0.1 pf chip capacitors atc600f0r1bt250xt atc c13, c14 10 ? f chip capacitors c5750x7s2a106m230kb tdk c15, c16 470 ? f, 63 v electrolytic capacitors mcgpr63v477m13x26--rh multicomp c17, c18 10 ? f chip capacitors grm32er61h106ka12l murata r1, r2 2.2 ? , 1/4 w chip resistors crcw12062r20jnea vishay r3 50 , 10 w chip resistor 81a7031--50--5f florida rf labs pcb rogers ro4350b, 0.020 ? , ? r =3.66 d53347 mtl
aft18h356--24sr6 15 rf device data freescale semiconductor, inc. typical characteris tics ? 1930?1995 mhz irl, input return loss (db) 1880 acpr f, frequency (mhz) figure 26. single--carrier output peak--to--average ratio compression (parc) broa dband performance @ p out = 63 watts avg. -- 1 7 -- 9 -- 11 -- 1 3 -- 1 5 10 20 19 18 -- 3 2 52 50 48 46 -- 2 7 -- 2 8 -- 2 9 -- 3 0 ? d , drain efficiency (%) ? d g ps , power gain (db) 17 16 15 14 13 12 11 1900 1920 1940 1960 1980 2000 2020 2040 44 -- 3 1 -- 1 9 acpr (dbc) parc irl parc (db) -- 3 . 6 -- 2 -- 2 . 4 -- 2 . 8 -- 3 . 2 -- 4 g ps 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf 1 acpr p out , output power (watts) avg. figure 27. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 2 0 -- 3 0 10 22 0 60 50 40 30 20 ? d , drain efficiency (%) ? d g ps , power gain (db) 20 18 10 100 300 10 -- 7 0 acpr (dbc) 16 14 12 -- 1 0 -- 4 0 -- 5 0 -- 6 0 figure 28. broadband frequency response 10 16 f, frequency (mhz) 14 13 12 gain (db) 15 11 1810 1850 1890 1930 1970 2010 2050 2090 2130 -- 3 0 30 20 10 0 -- 1 0 irl (db) -- 2 0 gain irl 1960 mhz v dd =28vdc,p out =63w(avg.),i dqa = 950 ma v gsb = 1.3 vdc, single--carrier w--cdma v dd =28vdc,i dqa = 950 ma v gsb = 1.3 vdc, single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01%= pr obabilit y on ccdf 1930 mhz 1995 mhz g ps 1930 mhz 1995 mhz 1960 mhz 1930 mhz 1960 mhz 1995 mhz v dd =28vdc p in =0dbm i dqa = 950 ma v gsb =1.3vdc
16 rf device data freescale semiconductor, inc. aft18h356--24sr6 table 12. carrier side load pull performance ? maximum power tuning v dd =28vdc,i dqa = 775 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 1.98 -- j5.37 2.22 + j5.56 1.13 -- j5.10 16.4 51.2 132 53.7 -- 1 0 1960 2.08 -- j5.43 2.59 + j5.75 1.11 -- j5.19 16.2 51.1 129 52.4 -- 1 0 1995 2.42 -- j5.68 3.14 + j5.82 1.10 -- j5.38 16.2 50.9 124 50.1 -- 1 0 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 1.98 -- j5.37 2.20 + j5.93 1.10 -- j5.31 14.1 51.9 155 53.4 -- 1 6 1960 2.08 -- j5.43 2.64 + j6.19 1.10 -- j5.49 13.8 51.8 151 51.2 -- 1 5 1995 2.42 -- j5.68 3.29 + j6.34 1.07 -- j5.53 13.9 51.6 146 49.9 -- 1 5 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 13. carrier side load pull performance ? maximum drain efficiency tuning v dd =28vdc,i dqa = 775 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 1.98 -- j5.37 2.13 + j5.54 2.20 -- j4.31 19.0 49.4 87 61.8 -- 1 3 1960 2.08 -- j5.43 2.43 + j5.74 2.15 -- j4.14 19.1 48.9 78 59.9 -- 1 4 1995 2.42 -- j5.68 2.94 + j5.79 2.15 -- j4.62 18.9 49.1 81 57.3 -- 1 1 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 1.98 -- j5.37 2.14 + j5.88 2.08 -- j4.39 16.8 50.2 105 61.2 -- 1 9 1960 2.08 -- j5.43 2.51 + j6.12 1.91 -- j4.22 16.8 49.9 98 59.4 -- 2 1 1995 2.42 -- j5.68 3.21 + j6.20 2.11 -- j4.65 16.8 50.0 99 57.1 -- 1 7 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
aft18h356--24sr6 17 rf device data freescale semiconductor, inc. table 14. peaking side load pull performance ? maximum power tuning v dd =28vdc,v gsb =1.4vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 2.34 -- j5.33 3.02 + j6.08 1.58 -- j4.91 13.9 54.5 285 56.8 -- 2 8 1960 3.57 -- j5.40 4.37 + j6.41 1.79 -- j5.19 13.8 54.5 281 55.9 -- 2 7 1995 4.83 -- j4.85 6.83 + j5.71 1.98 -- j5.45 13.8 54.4 276 55.5 -- 2 6 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 2.34 -- j5.33 3.31 + j6.32 1.96 -- j5.00 12.1 55.2 330 60.6 -- 3 5 1960 3.57 -- j5.40 4.91 + j6.61 1.98 -- j5.29 11.9 55.2 331 58.7 -- 3 4 1995 4.83 -- j4.85 7.71 + j5.38 2.23 -- j5.91 11.5 55.2 331 55.3 -- 3 1 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 15. peaking side load pull performance ? maximum drain efficiency tuning v dd =28vdc,v gsb =1.4vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 2.34 -- j5.33 2.65 + j5.93 1.99 -- j2.55 15.2 51.8 151 71.0 -- 3 5 1960 3.57 -- j5.40 3.82 + j6.34 1.88 -- j2.67 15.1 51.7 147 70.1 -- 3 5 1995 4.83 -- j4.85 6.03 + j5.96 2.00 -- j2.88 15.0 51.8 152 69.7 -- 3 3 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1930 2.34 -- j5.33 3.03 + j6.23 1.97 -- j3.02 13.3 53.0 200 70.7 -- 4 4 1960 3.57 -- j5.40 4.45 + j6.62 1.85 -- j3.07 13.2 52.8 189 69.6 -- 4 4 1995 4.83 -- j4.85 7.11 + j5.78 1.94 -- j3.28 13.1 52.9 196 69.7 -- 4 2 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
18 rf device data freescale semiconductor, inc. aft18h356--24sr6 p1db -- typical carrier side load pull contours ? 1960 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 29. p1db load pull output power contours (dbm) real ( ? ) imaginary ( ? ) 1.5 14 2.5 2 33.5 -- 6 -- 3 . 5 -- 4 -- 4 . 5 -- 5 -- 5 . 5 -- 3 figure 30. p1db load pull efficiency contours (%) real ( ? ) imaginary ( ? ) 1.5 14 2.5 2 33.5 -- 6 -- 3 . 5 -- 4 -- 4 . 5 -- 5 -- 5 . 5 -- 3 imaginary ( ? ) 1.5 14 2.5 2 33.5 -- 6 -- 3 . 5 -- 4 -- 4 . 5 -- 5 -- 5 . 5 -- 3 figure 31. p1db load pull gain contours (db) real ( ? ) figure 32. p1db load pull am/pm contours ( ? ) real ( ? ) imaginary ( ? ) -- 6 -- 3 . 5 -- 4 -- 4 . 5 -- 5 -- 5 . 5 -- 3 e p 49 48 48.5 49.5 50 50.5 51 47.5 47 50 58 52 54 56 e p 46 48 46 48 50 16 16.5 17 17.5 18 18.5 19 19.5 20 e p 1 0.5 3 1.5 2 2.5 e p -- 1 2 -- 1 6 -- 1 8 -- 1 4 -- 2 0 -- 2 2 -- 1 0 -- 1 0 -- 2 4 -- 2 6
aft18h356--24sr6 19 rf device data freescale semiconductor, inc. p3db -- typical carrier side load pull contours ? 1960 mhz -- 7 -- 3 . 5 -- 4 -- 4 . 5 -- 5 -- 5 . 5 -- 3 -- 6 -- 6 . 5 -- 7 -- 3 . 5 -- 4 -- 4 . 5 -- 5 -- 5 . 5 -- 3 -- 6 -- 6 . 5 imaginary ( ? ) 1.5 15 2.5 2 33.5 44.5 imaginary ( ? ) 1.5 15 2.5 2 33.5 44.5 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 33. p3db load pull output power contours (dbm) real ( ? ) imaginary ( ? ) 1.5 15 2.5 2 33.5 -- 7 -- 3 . 5 -- 4 -- 4 . 5 -- 5 -- 5 . 5 -- 3 figure 34. p3db load pull efficiency contours (%) real ( ? ) figure 35. p3db load pull gain contours (db) real ( ? ) figure 36. p3db load pull am/pm contours ( ? ) -- 6 -- 6 . 5 44.5 e p 48.5 48 44 e p 14 13.5 49 49.5 50 50.5 51 51.5 e p 14.5 15 15.5 16 16.5 17 17.5 46 48 50 52 54 56 58 1 0.5 3 1.5 2 2.5 -- 5 . 5 -- 3 -- 3 . 5 -- 4 -- 4 . 5 -- 5 -- 6 imaginary ( ? ) -- 1 4 -- 1 6 -- 1 8 -- 2 2 -- 2 4 -- 2 6 e p -- 2 0 -- 2 8 -- 3 0 real ( ? )
20 rf device data freescale semiconductor, inc. aft18h356--24sr6 p1db -- typical peaking side load pull contours ? 1960 mhz -- 6 -- 1 -- 2 -- 3 -- 4 -- 5 -- 7 1.5 1 5 2.5 2 33.5 -- 6 -- 1 -- 2 -- 3 -- 4 -- 5 44.5 -- 7 1.5 1 5 2.5 2 33.5 -- 6 -- 1 -- 2 -- 3 -- 4 -- 5 44.5 -- 7 imaginary ( ? ) imaginary ( ? ) imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 37. p1db load pull output power contours (dbm) real ( ? ) imaginary ( ? ) 1.5 1 5 2.5 2 33.5 -- 6 -- 1 -- 2 -- 3 -- 4 -- 5 figure 38. p1db load pull efficiency contours (%) real ( ? ) figure 39. p1db load pull gain contours (db) real ( ? ) figure 40. p1db load pull am/pm contours ( ? ) real ( ? ) 44.5 -- 7 e p 50.5 51 51.5 52 52.5 53 53.5 54 54 56 p e 13.5 14 14.5 15 53.5 53 e p 58 60 62 64 66 68 54 56 11.5 12 12.5 13 13.5 14 -- 2 4 -- 2 2 1.5 1 5 2.5 2 3 3.5 4 4.5 p e -- 2 6 -- 2 8 -- 3 0 -- 3 2 -- 3 4 -- 3 6 -- 3 8
aft18h356--24sr6 21 rf device data freescale semiconductor, inc. p3db -- typical peaking side load pull contours ? 1960 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 41. p3db load pull output power contours (dbm) real ( ? ) imaginary ( ? ) 1.5 14 2.5 2 33.5 -- 6 -- 2 -- 3 -- 4 -- 5 -- 1 figure 42. p3db load pull efficiency contours (%) real ( ? ) figure 43. p3db load pull gain contours (db) real ( ? ) figure 44. p3db load pull am/pm contours ( ? ) real ( ? ) imaginary ( ? ) 1.5 14 2.5 2 33.5 -- 6 -- 2 -- 3 -- 4 -- 5 -- 1 imaginary ( ? ) 1.5 14 2.5 2 33.5 -- 6 -- 2 -- 3 -- 4 -- 5 -- 1 imaginary ( ? ) 1.5 14 2.5 2 33.5 -- 6 -- 2 -- 3 -- 4 -- 5 -- 1 e 51 51.5 p 52 52.5 53 53.5 54 54.5 55 60 58 56 62 64 66 54 e p 68 56 54 11.5 11 p e p e 12 12.5 13 11 11.5 12 -- 3 4 -- 3 6 -- 4 0 -- 3 2 -- 3 8 -- 3 0 -- 4 2 -- 4 4 -- 4 6 -- 3 0
22 rf device data freescale semiconductor, inc. aft18h356--24sr6 package dimensions
aft18h356--24sr6 23 rf device data freescale semiconductor, inc.
24 rf device data freescale semiconductor, inc. aft18h356--24sr6 product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www .freescale.com, and select th e ?part number? link. go to software & tools on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 1 mar. 2015 ? initial release of data sheet
aft18h356--24sr6 25 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2013, 2015 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: aft18h356--24s rev. 1, 3/2015

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